linear integrated systems linear integrated systems 4042 clipper court, fremont, ca 94538 ? tel: (510) 490-9160 ? fax: (510) 353-0261 1 7 35 bottom view 2 6 22 x 20 mils g1 s2 s1 g2 d2 d1 g1 s2 s1 g2 d1 d2 ls5905 ls5906 ls5907 ls5908 ls5909 low leakage low drift monolithic dual n-channel jfet features low drift | d v gs1-2 / d t|= 5 m v/ c max. ultra low leakage i g = 150fa typ. low pinchoff v p = 2v typ. absolute maximum ratings note 1 @ 25 c (unless otherwise noted) maximum temperatures storage temperature -65 to +150 c operating junction temperature +150 c maximum voltage and current for each transistor note 1 -v gss gate voltage to drain or source 40v -v dso drain to source voltage 40v -i g(f) gate forward current 10ma -i g gate reverse current 10 m a maximum power dissipation device dissipation @ free air - total 40mw @ +125 c electrical characteristics @ 25 c (unless otherwise noted) symbol characteristics ls5906 ls5907 ls5908 ls5909 ls5905 units conditions | d v gs1-2 / d t| max. drift vs. temperature 5 10 20 40 40 m v/ cv dg = 10v, i d = 30 m a t a =-55 c to +125 c |v gs1-2 | max. offset voltage 5 5 10 15 15 mv v dg =10v i d = 30 m a -i g max. operating 1 1 1 1 3 pa -i g max. high temperature 1 1 1 1 3 na t a = +125 c -i gss max. at full conduction 2 2 2 2 5 pa v ds = 0v v gs = 20v -i gss max. high temperature 5 5 5 5 10 na t a = +125 c symbol characteristics min. typ. max. units conditions bv gss breakdown voltage 40 60 -- v v ds = 0 i d = 1na bv ggo gate-to-gate breakdown 40 -- -- v i g = 1na i d = 0 i s = 0 transconductance y fss full conduction 70 300 500 m mho v dg = 10v v gs = 0 f= 1khz y fs typical operation 50 100 200 m mho v dg = 10v i d = 30 m a f= 1khz |y fs1-2 /y fs | mismatch -- 1 5 % drain current i dss full conduction 60 400 1000 m av dg = 10v v gs = 0 |i dss1-2 /i dss | mismatch at full conduction -- 2 5 % gate voltage v gs (off) or v p pinchoff voltage 0.6 2 4.5 v v ds = 10v i d = 1na v gs operating range -- -- 4 v v ds = 10v i d = 30 m a gate current i ggo gate-to-gate leakage -- 1 -- pa v gg =20v
linear integrated systems 4042 clipper court, fremont, ca 94538 ? tel: (510) 490-9160 ? fax: (510) 353-0261 symbol characteristics min. typ. max. units conditions output conductance y oss full conduction -- -- 5 m mho v dg = 10v v gs = 0 y os operating -- 0.1 0.1 m mho v dg = 10v i d = 30 m a |y os1-2 | differential -- 0.01 0.1 m mho common mode rejection cmr -20 log | d v gs1-2 / d v ds |--90--db d v ds = 10 to 20v i d = 30 m a cmr -20 log | d v gs1-2 / d v ds |--90--db d v ds = 5 to 10v i d = 30 m a noise nf figure -- -- 1 db v ds = 10v v gs = 0 r g = 10m w f= 100hz nbw= 6hz e n voltage -- 20 70 nv/ ? hz v dg = 10v i d = 30 m a f= 10hz nbw= 1hz capacitance c iss input -- -- 3 pf v ds = 10v v gs = 0 f= 1mhz c rss reverse transfer -- -- 1.5 pf v ds = 10v v gs = 0 f= 1mhz c dd drain-to-drain -- -- 0.1 pf v dg = 20v i d = 30 m a notes: 1. these ratings are limiting values above which the serviceability of any semiconductor may be impaired. to-71 six lead 0.230 0.209 dia. dia. 0.195 0.175 0.030 max. 0.500 min. 0.150 0.115 0.019 0.016 dia. 6 leads 3 2 1 8 4 5 6 0.046 0.036 45 0.048 0.028 0.100 0.050 7 to-78 0.335 0.370 0.305 0.335 0.016 0.019 0.165 0.185 0.040 max. dim. a 0.016 0.021 dim. b min. 0.500 0.200 0.100 0.100 0.028 0.034 45 1 2 3 4 5 6 7 8 0.029 0.045 seating plane s1 1 2 3 45 6 7 8 d1 ss g1 s2 g2 ss d2 p-dip s1 1 2 3 45 6 7 8 d1 ss g1 s2 g2 ss d2 0.150 0.158 (3.81) (4.01) 0.188 0.197 0.228 0.244 (5.79) (6.20) soic 0.320 0.290 (8.13) (7.37) 0.405 max. (10.29) (4.78) (5.00)
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